UK Oxford Instrument PlasmaPro NGP80 Reactive Ion Etching System
Technical specifications and key features:
Reactive gas source: O2, Ar, CF4，CHF3，SF6
Max. RF power:600W
Electrode size：240mm
Processing materials: Silicon based materials
Sample size: 4 inches
Contact person：Zhe Liu
Techniques and Applications:
For various types of materials removal based on reactive ion etching to form micro-/nano structures on substrates, towards the construction of photonic, biological, mechanical, electrical and medical devices to examine the size and quantum effects, etc.
