UK Oxford Instrument System100 Plasma Enhanced Chemical Vapor
Technical specifications and key features:
Gas sources: N2O, SiH4, NH3, CH4, O2, Ar, N2
Gas for purging: mixture of CF4/O2
RF frequency: high: 13.56 MHz; low: 50-450 kHz
Max. RF power:RIE: 600W; ICP: 3000W
Temperature range: RT to 400℃
Materials to grow: silicon oxide, silicon nitride, carbon nitride, poly-Si
Contact person:Xiaoxiang Xia

Techniques and Applications:
For various types of high quality materials growth with thickness in a broad range that can be controlled in nanometer scale to fabricate electronic, optical, biological, mechanical devices, solar cell and micro-fluidics.