USA Cambridge NanoTech Inc Savannah-100 Atomic Layer
Technical specifications and key features:
Available high-k dielectric materials: Al2O3, HfO2, ZrO2
Sample size: up to 100mm)
Uniformity: <1%
Growth temperature: RT-350oC
Thickness control precision: ~1Å
Contact person:Chengchun Tang

Techniques and Applications:
With a wide range of applications in Micor-/nano electronics, solar cell and MEMS.