Facilities

Beijing Advanced LKJ-1D-150 Ion Mean Etching System
Technical specifications and key features:
Reactive gas source: Ar
Ion energy range: 1~1000 eV
Ion beam density:1~0.7 mA/cm2
Effective beam probe: 100 mm
Processing materials: oxides, metals and semiconductors
Sample size: up to 4 inches
Contact person:Baogang Quan

Techniques and Applications:
Widely used in the etching of oxides, metals and semiconductors with masks (typically resists) to form micro-/nanostructures in the substrates. The application fields include the thickness reduction by ion milling, the fabrication of micro-/nano electronics, photonic crystals, metamaterials and optical devices.