Facilities

JEOLJBX-6300FS Electron Beam Lithography System
Technical specifications and key features:
Max.Acc. Vol.: 100 kV
SEM Resolution: 2 nm
Min. Feature Size: 8 nm
Stitching Accuracy: 20 nm
Sample size: square substrates with side length: 2 ~ 4cm
Wafers: 2~6 inch; mask holder: 2 and 5 inches
Contact person:Chengchun Tang

Techniques and Applications:
EBL is an important tool for fabrication of nanometer scale structures and features that are applicable in the studying of size and quantum effects, or producing masks for high resolution fabrication. The applications fields including micro-/nano electronic devices, optic-electronic devices, bio-sensors, MEMS and NEMS, superconducting/magnetic devices, photonic crystals, plasmonic devices and so on.