Facilities

Raith 150 Electron Beam Lithography System
Technical specifications and key features:
Max.Acc. Vol.: 30 kV
SEM Resolution: 2nm
Min. Feature Size: 12 nm
Stitching Accuracy: 20 nm
Sample size: up to 6 inches
Contact person:Haifang Yang

Techniques and Applications:
EBL is an important tool for fabrication of nanometer scale structures and features that are applicable in the studying of size and quantum effects, or producing masks for high resolution fabrication. The applications fields including micro-/nano electronic devices, optic-electronic devices, bio-sensors, MEMS and NEMS, superconducting/magnetic devices, photonic crystals, plasmonic devices and so on.